Self-Aligned Organic Metal–Semiconductor Field-Effect Transistor

Abstract We propose the design and fabrication of a coplanar electrode structure for an organic metal–semiconductor field-effect transistor (OMESFET), with gate self-aligned between source drain electrodes. first used nanoimprint lithography (NIL) to define channel area device on patterned metal, then chemical wet etching create electrodes by removing metal in area. After etching, was deposited The semiconductor cover rectifying response characteristics prove that is functional OMESFET. In this experiment, we also demonstrated OMESFET has lower driving voltages smaller subthreshold swing ( SS ) than conventional metal–insulator–semiconductor (OMISFET). Compared most common structure, effectively eliminates overlapping source/drain commonly seen currently reported OMESFETs, which means reduces parasitic capacitance, theoretically allowing have higher cutoff frequency. These features render our proposed devices more favorable low-power high-frequency circuit applications.